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Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
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2N3583
Central Semiconductor Corp
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Datasheet
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2N3583
Central Semiconductor Corp
Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
Part Package Code | TO-66 | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Central Semiconductor | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 1 A | |
Collector-Base Capacitance-Max | 120 pF | |
Collector-Emitter Voltage-Max | 175 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
JEDEC-95 Code | TO-66 | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 35 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 10 MHz | |
VCEsat-Max | 5 V |
This table gives cross-reference parts and alternative options found for 2N3583. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3583, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N3583 | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, | Microsemi Corporation | 2N3583 vs 2N3583 |
2N3583.MOD | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN | TT Electronics Resistors | 2N3583 vs 2N3583.MOD |
2N3583.MODR1 | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN | TT Electronics Resistors | 2N3583 vs 2N3583.MODR1 |
2N3583.MODR1 | 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N3583 vs 2N3583.MODR1 |
2N3583R1 | 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N3583 vs 2N3583R1 |
2N3583 | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | Mospec Semiconductor Corp | 2N3583 vs 2N3583 |
2N3583 | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | Solitron Devices Inc | 2N3583 vs 2N3583 |
2N3583 | 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-66 | Texas Instruments | 2N3583 vs 2N3583 |
2N3583 | 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N3583 vs 2N3583 |
2N3583.MOD | 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N3583 vs 2N3583.MOD |