Datasheets
1MBH50-060 by:

Insulated Gate Bipolar Transistor, 82A I(C), 600V V(BR)CES, N-Channel, PLASTIC, TO-3PL, 3 PIN

Part Details for 1MBH50-060 by Fuji Electric Co Ltd

Overview of 1MBH50-060 by Fuji Electric Co Ltd

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Applications Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Part Details for 1MBH50-060

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1MBH50-060 Part Data Attributes

1MBH50-060 Fuji Electric Co Ltd
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1MBH50-060 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor, 82A I(C), 600V V(BR)CES, N-Channel, PLASTIC, TO-3PL, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer COLLMER SEMICONDUCTOR INC
Part Package Code TO-3PL
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 82 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1000 ns
Turn-on Time-Nom (ton) 1200 ns

Alternate Parts for 1MBH50-060

This table gives cross-reference parts and alternative options found for 1MBH50-060. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MBH50-060, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation 1MBH50-060 vs SGP13N60UF
IXGH25N100U1 Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc 1MBH50-060 vs IXGH25N100U1
HGTG40N60B3_NL Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation 1MBH50-060 vs HGTG40N60B3_NL
IRG4PC30FPBF Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 Infineon Technologies AG 1MBH50-060 vs IRG4PC30FPBF
IRGPS40B120U Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN International Rectifier 1MBH50-060 vs IRGPS40B120U
HGTP15N50C1 Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor 1MBH50-060 vs HGTP15N50C1
IRG4BC30U-SPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier 1MBH50-060 vs IRG4BC30U-SPBF
IXGH32N60B Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation 1MBH50-060 vs IXGH32N60B
IRG4BC15UD-SPBF Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG 1MBH50-060 vs IRG4BC15UD-SPBF
HGTP6N50E1D Insulated Gate Bipolar Transistor, 7.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation 1MBH50-060 vs HGTP6N50E1D

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