Part Details for 1MBH25D-120 by Fuji Electric Co Ltd
Overview of 1MBH25D-120 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 1MBH25D-120
1MBH25D-120 CAD Models
1MBH25D-120 Part Data Attributes:
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1MBH25D-120
Fuji Electric Co Ltd
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Datasheet
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1MBH25D-120
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel, TO-3PL, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | COLLMER SEMICONDUCTOR INC | |
| Part Package Code | TO-3PL | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 38 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1000 ns | |
| Turn-on Time-Nom (ton) | 1200 ns |
Alternate Parts for 1MBH25D-120
This table gives cross-reference parts and alternative options found for 1MBH25D-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MBH25D-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| GT15H101 | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBH25D-120 vs GT15H101 |
| IRGBC30FD2 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | 1MBH25D-120 vs IRGBC30FD2 |
| IRGPC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | International Rectifier | 1MBH25D-120 vs IRGPC50U |
| HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL | onsemi | 1MBH25D-120 vs HGTD7N60C3S9A |
| IRG4BC20W-STRLPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | 1MBH25D-120 vs IRG4BC20W-STRLPBF |
| IXGH36N60A3D4 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | 1MBH25D-120 vs IXGH36N60A3D4 |
| IRG4PH50UD | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | 1MBH25D-120 vs IRG4PH50UD |
| HGTG10N120BND | 1200V, NPT IGBT, 450-TUBE | onsemi | 1MBH25D-120 vs HGTG10N120BND |
| HGTP12N60C3DR | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | 1MBH25D-120 vs HGTP12N60C3DR |
| IXGH12N60BD1 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | 1MBH25D-120 vs IXGH12N60BD1 |