Part Details for 1N5806US by VPT Components
Overview of 1N5806US by VPT Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 1N5806US
1N5806US CAD Models
1N5806US Part Data Attributes
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1N5806US
VPT Components
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Datasheet
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1N5806US
VPT Components
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, MELF-2
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Part Life Cycle Code | Active | |
Ihs Manufacturer | VPT COMPONENTS | |
Package Description | MELF-2 | |
Reach Compliance Code | compliant | |
Additional Feature | HIGH RELIABILITY | |
Application | FAST RECOVERY | |
Breakdown Voltage-Min | 160 V | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 0.875 V | |
JESD-30 Code | O-LELF-R2 | |
Non-rep Pk Forward Current-Max | 35 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -65 °C | |
Output Current-Max | 2.5 A | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Rep Pk Reverse Voltage-Max | 150 V | |
Reverse Current-Max | 1 µA | |
Reverse Recovery Time-Max | 0.025 µs | |
Surface Mount | NO | |
Technology | AVALANCHE | |
Terminal Form | WRAP AROUND | |
Terminal Position | END |
Alternate Parts for 1N5806US
This table gives cross-reference parts and alternative options found for 1N5806US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5806US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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JANTX1N5806US | Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, | Microsemi Corporation | 1N5806US vs JANTX1N5806US |
JANTX1N5806US | Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, | VPT Components | 1N5806US vs JANTX1N5806US |
JAN1N5806US | Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, | Microsemi Corporation | 1N5806US vs JAN1N5806US |
JANS1N5806US | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, | Micross Components | 1N5806US vs JANS1N5806US |
1N5806USE3 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5A, 2 PIN | Microsemi Corporation | 1N5806US vs 1N5806USE3 |
1N5806US | Rectifier Diode, | MACOM | 1N5806US vs 1N5806US |
JANTXV1N5806US | Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon | Microchip Technology Inc | 1N5806US vs JANTXV1N5806US |
JAN1N5806US | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2 | Sensitron Semiconductors | 1N5806US vs JAN1N5806US |
JANS1N5806US | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, | Bkc Semiconductors Inc | 1N5806US vs JANS1N5806US |
1N5806USE3 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon | Microchip Technology Inc | 1N5806US vs 1N5806USE3 |