ZXMN2A04DN8TA
vs
ZXMN2A04DN8TC
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
ZETEX PLC
DIODES INC
Package Description
SO-8
SO-8
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
LOW THRESHOLD
LOW THRESHOLD
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
20 V
Drain Current-Max (ID)
5.9 A
5.9 A
Drain-source On Resistance-Max
0.025 Ω
0.025 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
1
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Pbfree Code
Part Package Code
SOT
Pin Count
8
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
2.1 W
Compare ZXMN2A04DN8TA with alternatives
Compare ZXMN2A04DN8TC with alternatives