ZXMN2A04DN8TA vs ZXMN2A04DN8TC feature comparison

ZXMN2A04DN8TA Zetex / Diodes Inc

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ZXMN2A04DN8TC Diodes Incorporated

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Rohs Code Yes No
Part Life Cycle Code Transferred Active
Ihs Manufacturer ZETEX PLC DIODES INC
Package Description SO-8 SO-8
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature LOW THRESHOLD LOW THRESHOLD
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 5.9 A 5.9 A
Drain-source On Resistance-Max 0.025 Ω 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Pbfree Code No
Part Package Code SOT
Pin Count 8
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 2.1 W

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Compare ZXMN2A04DN8TC with alternatives