Datasheets
ZXMN2A04DN8TA by:

Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Part Details for ZXMN2A04DN8TA by Zetex / Diodes Inc

Overview of ZXMN2A04DN8TA by Zetex / Diodes Inc

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for ZXMN2A04DN8TA

Part # Distributor Description Stock Price Buy
DISTI # 85585962
Verical Trans MOSFET N-CH 20V 5.9A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 500 Package Multiple: 500 Date Code: 2245 Americas - 12000
  • 500 $0.8138
$0.8138 Buy Now
DISTI # 80596464
Verical Trans MOSFET N-CH 20V 5.9A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 500 Package Multiple: 500 Date Code: 2414 Americas - 3500
  • 500 $0.8741
  • 1,000 $0.8137
  • 1,500 $0.8119
$0.8119 / $0.8741 Buy Now
Bristol Electronics   Min Qty: 4 205
  • 4 $1.6500
  • 14 $1.0725
  • 48 $0.6187
  • 163 $0.5280
$0.5280 / $1.6500 Buy Now
Quest Components   164
  • 1 $2.2000
  • 12 $1.1000
  • 56 $0.6600
$0.6600 / $2.2000 Buy Now

Part Details for ZXMN2A04DN8TA

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ZXMN2A04DN8TA Part Data Attributes

ZXMN2A04DN8TA Zetex / Diodes Inc
Buy Now Datasheet
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ZXMN2A04DN8TA Zetex / Diodes Inc Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer ZETEX PLC
Package Description SO-8
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 5.9 A
Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for ZXMN2A04DN8TA

This table gives cross-reference parts and alternative options found for ZXMN2A04DN8TA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZXMN2A04DN8TA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
ZXMN2A04DN8TA Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Diodes Incorporated ZXMN2A04DN8TA vs ZXMN2A04DN8TA
ZXMN2A04DN8TC Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Diodes Incorporated ZXMN2A04DN8TA vs ZXMN2A04DN8TC
ZXMN2A04DN8TC Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Zetex / Diodes Inc ZXMN2A04DN8TA vs ZXMN2A04DN8TC
Part Number Description Manufacturer Compare
UPA1917TE-A Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-95, 6 PIN NEC Electronics Group ZXMN2A04DN8TA vs UPA1917TE-A
NTGS4111PT1G 3700mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 318G-02, TSOP-6 Rochester Electronics LLC ZXMN2A04DN8TA vs NTGS4111PT1G
SI4834DY Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix ZXMN2A04DN8TA vs SI4834DY
SI6954ADQ-T1-GE3 Small Signal Field-Effect Transistor, 3.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8 Vishay Siliconix ZXMN2A04DN8TA vs SI6954ADQ-T1-GE3
ZXMN2A04DN8TC Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Zetex / Diodes Inc ZXMN2A04DN8TA vs ZXMN2A04DN8TC
ZXMN3A04DN8TC Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 Zetex / Diodes Inc ZXMN2A04DN8TA vs ZXMN3A04DN8TC
FDW2501NZ 5500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA, TSSOP-8 Rochester Electronics LLC ZXMN2A04DN8TA vs FDW2501NZ
ZXMD65N02N8TA Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Zetex / Diodes Inc ZXMN2A04DN8TA vs ZXMD65N02N8TA
ZXMN3F318DN8TA Small Signal Field-Effect Transistor, 4.6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Zetex / Diodes Inc ZXMN2A04DN8TA vs ZXMN3F318DN8TA
UPA1900TE-A Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, THIN, MINIMOLD PACKAGE-6 NEC Electronics Group ZXMN2A04DN8TA vs UPA1900TE-A

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