Findchips: Compare WMS512K8-L15CIA vs 5962-9561303HYA

WMS512K8-L15CIA vs 5962-9561303HYA feature comparison

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Pbfree Code	No
Rohs Code	No
Part Life Cycle Code	Active	Transferred
Ihs Manufacturer	MICROSEMI CORP	MICROSEMI CORP
Part Package Code	DIP	DIP
Package Description	DIP,	DIP,
Pin Count	32	32
Reach Compliance Code	unknown	compliant
Access Time-Max	15 ns	85 ns
JESD-30 Code	R-CDIP-T32	R-CDIP-T32
Length	42.2 mm	42.2 mm
Memory Density	4194304 bit	4194304 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM
Memory Width	8	8
Number of Functions	1	1
Number of Terminals	32	32
Number of Words	524288 words	524288 words
Number of Words Code	512000	512000
Operating Mode	ASYNCHRONOUS	ASYNCHRONOUS
Operating Temperature-Max	70 °C	125 °C
Operating Temperature-Min		-55 °C
Organization	512KX8	512KX8
Package Body Material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package Code	DIP	DIP
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Qualification Status	Not Qualified	Not Qualified
Seated Height-Max	5.13 mm
Supply Voltage-Max (Vsup)	5.5 V	5.5 V
Supply Voltage-Min (Vsup)	4.5 V	4.5 V
Supply Voltage-Nom (Vsup)	5 V	5 V
Surface Mount	NO	NO
Technology	CMOS	CMOS
Temperature Grade	COMMERCIAL	MILITARY
Terminal Form	THROUGH-HOLE	THROUGH-HOLE
Terminal Position	DUAL	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Number Matches	1	5
ECCN Code		3A001.A.2.C
HTS Code		8542.32.00.41
JESD-609 Code		e0
Screening Level		MIL-STD-883
Terminal Finish		TIN LEAD
	Memory » SRAMs	Memory » SRAMs