WE512K8200CQ
vs
FTE512S8N-20B
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROSEMI CORP-PMG MICROELECTRONICS
FORCE TECHNOLOGIES LTD
Part Package Code
DIP
DIP
Package Description
DIP,
DIP, DIP32,.6
Pin Count
32
32
Reach Compliance Code
unknown
compliant
Access Time-Max
200 ns
200 ns
JESD-30 Code
R-CDIP-T32
R-CDIP-T32
JESD-609 Code
e4
Memory Density
4194304 bit
4194304 bit
Memory IC Type
EEPROM MODULE
EEPROM
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
32
32
Number of Words
524288 words
524288 words
Number of Words Code
512000
512000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Organization
512KX8
512KX8
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Programming Voltage
5 V
5 V
Qualification Status
Not Qualified
Not Qualified
Screening Level
MIL-STD-883
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
MILITARY
Terminal Finish
GOLD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.5 mm
2.54 mm
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Write Cycle Time-Max (tWC)
10 ms
10 ms
Base Number Matches
1
1
ECCN Code
3A001.A.2.C
HTS Code
8542.32.00.51
Data Polling
YES
Data Retention Time-Min
10
Endurance
10000 Write/Erase Cycles
Length
42.164 mm
Package Equivalence Code
DIP32,.6
Page Size
128 words
Seated Height-Max
10.16 mm
Standby Current-Max
0.0012 A
Supply Current-Max
0.09 mA
Width
15.24 mm
Compare WE512K8200CQ with alternatives
Compare FTE512S8N-20B with alternatives