W29N08GVSJAD
vs
W29N08GVBJAF
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
WINBOND ELECTRONICS CORP
|
WINBOND ELECTRONICS CORP
|
Package Description |
,
|
VFBGA,
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Memory IC Type |
FLASH
|
FLASH
|
Programming Voltage |
3.3 V
|
3.3 V
|
Type |
SLC NAND TYPE
|
SLC NAND TYPE
|
Base Number Matches |
1
|
1
|
Samacsys Manufacturer |
|
Winbond
|
Data Retention Time-Min |
|
10
|
JESD-30 Code |
|
R-PBGA-B63
|
Length |
|
11 mm
|
Memory Density |
|
8589934592 bit
|
Memory Width |
|
8
|
Number of Functions |
|
1
|
Number of Terminals |
|
63
|
Number of Words |
|
1073741824 words
|
Number of Words Code |
|
1000000000
|
Operating Mode |
|
ASYNCHRONOUS
|
Operating Temperature-Max |
|
105 °C
|
Operating Temperature-Min |
|
-40 °C
|
Organization |
|
1GX8
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Code |
|
VFBGA
|
Package Equivalence Code |
|
BGA63,10X12,32
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
Parallel/Serial |
|
PARALLEL
|
Seated Height-Max |
|
1 mm
|
Standby Current-Max |
|
0.00005 A
|
Supply Current-Max |
|
0.035 mA
|
Supply Voltage-Max (Vsup) |
|
3.6 V
|
Supply Voltage-Min (Vsup) |
|
2.7 V
|
Supply Voltage-Nom (Vsup) |
|
3.3 V
|
Surface Mount |
|
YES
|
Technology |
|
CMOS
|
Temperature Grade |
|
INDUSTRIAL
|
Terminal Form |
|
BALL
|
Terminal Pitch |
|
0.8 mm
|
Terminal Position |
|
BOTTOM
|
Width |
|
9 mm
|
Write Cycle Time-Max (tWC) |
|
0.025 ms
|
|
|
|
Compare W29N08GVSJAD with alternatives
Compare W29N08GVBJAF with alternatives