W25Q80BVSSJP
vs
M25P80SVMN3GB
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
WINBOND ELECTRONICS CORP
|
MICRON TECHNOLOGY INC
|
| Package Description |
SOIC-8
|
SOP,
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Clock Frequency-Max (fCLK) |
104 MHz
|
75 MHz
|
| JESD-30 Code |
S-PDSO-G8
|
R-PDSO-G8
|
| Length |
5.23 mm
|
4.9 mm
|
| Memory Density |
8388608 bit
|
8388608 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
8
|
8
|
| Number of Words |
1048576 words
|
1048576 words
|
| Number of Words Code |
1000000
|
1000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
105 °C
|
125 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
1MX8
|
1MX8
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
SOP
|
SOP
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Parallel/Serial |
SERIAL
|
SERIAL
|
| Programming Voltage |
3 V
|
2.7 V
|
| Screening Level |
AEC-Q100
|
|
| Seated Height-Max |
2.16 mm
|
1.75 mm
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
AUTOMOTIVE
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Pitch |
1.27 mm
|
1.27 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
5.23 mm
|
3.9 mm
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
SOIC
|
| Pin Count |
|
8
|
| Type |
|
NOR TYPE
|
|
|
|
Compare W25Q80BVSSJP with alternatives
Compare M25P80SVMN3GB with alternatives