VS12G422TDC-6 vs 5962-8859402WX feature comparison

VS12G422TDC-6 Vitesse Semiconductor Corporation

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5962-8859402WX Pyramid Semiconductor Corporation

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VITESSE SEMICONDUCTOR CORP PYRAMID SEMICONDUCTOR CORP
Part Package Code DIP DIP
Package Description DIP, DIP22,.4 DIP,
Pin Count 22 22
Reach Compliance Code unknown compliant
ECCN Code EAR99 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 6 ns 35 ns
I/O Type SEPARATE
JESD-30 Code R-CDIP-T22 R-XDIP-T22
JESD-609 Code e0
Length 28 mm
Memory Density 1024 bit 1024 bit
Memory IC Type CACHE SRAM STANDARD SRAM
Memory Width 4 4
Number of Functions 1 1
Number of Ports 1
Number of Terminals 22 22
Number of Words 256 words 256 words
Number of Words Code 256 256
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Organization 256X4 256X4
Output Characteristics 3-STATE
Output Enable YES
Package Body Material CERAMIC, METAL-SEALED COFIRED UNSPECIFIED
Package Code DIP DIP
Package Equivalence Code DIP22,.4
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 4.064 mm
Supply Current-Max 0.3 mA
Supply Voltage-Max (Vsup) 5.25 V 5.5 V
Supply Voltage-Min (Vsup) 4.75 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology MOS CMOS
Temperature Grade COMMERCIAL MILITARY
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL DUAL
Width 10.16 mm
Base Number Matches 2 3
Screening Level MIL-STD-883 Class B

Compare VS12G422TDC-6 with alternatives

Compare 5962-8859402WX with alternatives