VS12G422TDC-6
vs
AM9101BDM
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
VITESSE SEMICONDUCTOR CORP
ADVANCED MICRO DEVICES INC
Part Package Code
DIP
DIP
Package Description
DIP, DIP22,.4
DIP, DIP22,.4
Pin Count
22
22
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
3A001.A.2.C
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
6 ns
400 ns
I/O Type
SEPARATE
SEPARATE
JESD-30 Code
R-CDIP-T22
R-CDIP-T22
JESD-609 Code
e0
e0
Length
28 mm
27.432 mm
Memory Density
1024 bit
1024 bit
Memory IC Type
CACHE SRAM
STANDARD SRAM
Memory Width
4
4
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
22
22
Number of Words
256 words
256 words
Number of Words Code
256
256
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
70 °C
125 °C
Operating Temperature-Min
-55 °C
Organization
256X4
256X4
Output Characteristics
3-STATE
3-STATE
Output Enable
YES
YES
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
DIP
Package Equivalence Code
DIP22,.4
DIP22,.4
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
4.064 mm
5.08 mm
Supply Current-Max
0.3 mA
0.06 mA
Supply Voltage-Max (Vsup)
5.25 V
5.5 V
Supply Voltage-Min (Vsup)
4.75 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
MOS
NMOS
Temperature Grade
COMMERCIAL
MILITARY
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Width
10.16 mm
10.16 mm
Base Number Matches
2
1
Screening Level
MIL-STD-883 Class C
Compare VS12G422TDC-6 with alternatives
Compare AM9101BDM with alternatives