V58C2512164SDUJ8H
vs
K4H511638B-GLB30
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
PROMOS TECHNOLOGIES INC
|
SAMSUNG SEMICONDUCTOR INC
|
Part Package Code |
DSBGA
|
BGA
|
Package Description |
TBGA,
|
TBGA,
|
Pin Count |
60
|
60
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.28
|
8542.32.00.28
|
Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
JESD-30 Code |
R-PBGA-B60
|
R-PBGA-B60
|
Length |
12 mm
|
12 mm
|
Memory Density |
536870912 bit
|
536870912 bit
|
Memory IC Type |
DDR DRAM
|
DDR1 DRAM
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
60
|
60
|
Number of Words |
33554432 words
|
33554432 words
|
Number of Words Code |
32000000
|
32000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
105 °C
|
70 °C
|
Operating Temperature-Min |
-40 °C
|
|
Organization |
32MX16
|
32MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
TBGA
|
TBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, THIN PROFILE
|
GRID ARRAY, THIN PROFILE
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1.2 mm
|
1.2 mm
|
Self Refresh |
YES
|
YES
|
Supply Voltage-Max (Vsup) |
2.7 V
|
2.7 V
|
Supply Voltage-Min (Vsup) |
2.3 V
|
2.3 V
|
Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
10 mm
|
10 mm
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
No
|
Access Time-Max |
|
0.7 ns
|
JESD-609 Code |
|
e0
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare V58C2512164SDUJ8H with alternatives
Compare K4H511638B-GLB30 with alternatives