V33
vs
MMBV3102L
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
KNOX SEMICONDUCTORS INC
MOTOROLA INC
Part Package Code
DO-7
Package Description
O-LALF-W2
R-PDSO-G3
Pin Count
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
LOW LEAKAGE
HIGH Q
Breakdown Voltage-Min
22 V
30 V
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Cap Tolerance
20%
Diode Capacitance Ratio-Min
4.1
4.5
Diode Capacitance-Nom
33 pF
22 pF
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
JESD-30 Code
O-LALF-W2
R-PDSO-G3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
3
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
LONG FORM
SMALL OUTLINE
Power Dissipation-Max
0.4 W
0.225 W
Qualification Status
Not Qualified
Not Qualified
Quality Factor-Min
7
200
Rep Pk Reverse Voltage-Max
22 V
30 V
Reverse Current-Max
1e-7 µA
Reverse Test Voltage
20 V
Surface Mount
NO
YES
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
WIRE
GULL WING
Terminal Position
AXIAL
DUAL
Variable Capacitance Diode Classification
ABRUPT
HYPERABRUPT
Base Number Matches
38
3
Frequency Band
ULTRA HIGH FREQUENCY
JEDEC-95 Code
TO-236AB
Compare V33 with alternatives
Compare MMBV3102L with alternatives