UPD23C32000LGX-XXX vs K3N6C1000E-TC150 feature comparison

UPD23C32000LGX-XXX Renesas Electronics Corporation

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K3N6C1000E-TC150 Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Access Time-Max 140 ns 150 ns
Alternate Memory Width 8 8
JESD-30 Code R-PDSO-G44 R-PDSO-G44
JESD-609 Code e0
Memory Density 33554432 bit 33554432 bit
Memory IC Type MASK ROM MASK ROM
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 44 44
Number of Words 2097152 words 2097152 words
Number of Words Code 2000000 2000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min -10 °C
Organization 2MX16 2MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code SOP TSOP2
Package Equivalence Code SOP44,.63
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.00003 A
Supply Current-Max 0.06 mA 0.05 mA
Supply Voltage-Nom (Vsup) 3.3 V 5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Pitch 1.27 mm 0.8 mm
Terminal Position DUAL DUAL
Base Number Matches 2 1
Part Package Code TSOP2
Package Description TSOP2,
Pin Count 44
Length 18.41 mm
Peak Reflow Temperature (Cel) 240
Seated Height-Max 1.2 mm
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Time@Peak Reflow Temperature-Max (s) 30
Width 10.16 mm

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