UPA812T vs UPA810T-T1GB feature comparison

UPA812T Renesas Electronics Corporation

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UPA810T-T1GB NEC Compound Semiconductor Devices Ltd

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer RENESAS ELECTRONICS CORP NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Package Description PLASTIC, SO-6 PLASTIC, SO-6
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature LOW NOISE LOW NOISE
Collector Current-Max (IC) 0.065 A 0.1 A
Collector-Base Capacitance-Max 0.9 pF 1.5 pF
Collector-Emitter Voltage-Max 10 V 12 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 70
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G6 R-PDSO-G6
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 6 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 7000 MHz 4500 MHz
Base Number Matches 4 2
JESD-609 Code e0
Terminal Finish TIN LEAD

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