UNR521E
vs
PDTD114ET-T
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
PANASONIC CORP
NXP SEMICONDUCTORS
Part Package Code
SC-70
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
BUILT IN BIAS RESISTOR RATIO 0.47
BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.5 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
160
56
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e6
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
0.15 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN BISMUTH
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
150 MHz
100 MHz
Base Number Matches
1
1
Collector-Base Capacitance-Max
8 pF
Operating Temperature-Max
150 °C
VCEsat-Max
0.3 V
Compare UNR521E with alternatives
Compare PDTD114ET-T with alternatives