UM7306DR
vs
UM7306CR
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
LOW DISTORTION
|
LOW DISTORTION
|
| Application |
ATTENUATOR
|
ATTENUATOR
|
| Breakdown Voltage-Min |
600 V
|
600 V
|
| Case Connection |
ISOLATED
|
ANODE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance-Max |
0.7 pF
|
0.7 pF
|
| Diode Capacitance-Nom |
0.7 pF
|
0.7 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Forward Resistance-Max |
3 Ω
|
3 Ω
|
| Diode Res Test Current |
100 mA
|
100 mA
|
| Diode Res Test Frequency |
150 MHz
|
150 MHz
|
| Diode Type |
PIN DIODE
|
PIN DIODE
|
| Frequency Band |
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
| JESD-30 Code |
O-XRPM-F2
|
O-XUPM-N1
|
| Minority Carrier Lifetime-Nom |
4 µs
|
4 µs
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
1
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
POST/STUD MOUNT
|
POST/STUD MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Power Dissipation-Max |
6 W
|
7.5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reverse Test Voltage |
100 V
|
100 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
POSITIVE-INTRINSIC-NEGATIVE
|
POSITIVE-INTRINSIC-NEGATIVE
|
| Terminal Form |
FLAT
|
NO LEAD
|
| Terminal Position |
RADIAL
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Base Number Matches |
2
|
2
|
| Operating Temperature-Min |
|
-65 °C
|
|
|
|
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