UF640G-T2Q-R vs STB19NB20-1 feature comparison

UF640G-T2Q-R Unisonic Technologies Co Ltd

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STB19NB20-1 STMicroelectronics

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD STMICROELECTRONICS
Package Description TO-262, 3 PIN TABLESS TO-220, I2PAK-3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 242 mJ 580 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 18 A 19 A
Drain-source On Resistance-Max 0.18 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA TO-262AA
JESD-30 Code R-PSIP-T3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 72 A 76 A
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Part Package Code TO-262AA
Pin Count 3
JESD-609 Code e3
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 125 W
Qualification Status Not Qualified
Terminal Finish TIN

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