UF640G-T2Q-R
vs
UF640G-AA3-R
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
UNISONIC TECHNOLOGIES CO LTD
UNISONIC TECHNOLOGIES CO LTD
Package Description
TO-262, 3 PIN
SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
242 mJ
242 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
18 A
18 A
Drain-source On Resistance-Max
0.18 Ω
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
JESD-30 Code
R-PSIP-T3
R-PDSO-G4
Number of Elements
1
1
Number of Terminals
3
4
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
72 A
72 A
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
66 W
Compare UF640G-T2Q-R with alternatives
Compare UF640G-AA3-R with alternatives