UF5406G vs 1N5406G feature comparison

UF5406G Galaxy Microelectronics

Buy Now Datasheet

1N5406G Hitano Enterprise Corp

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD HITANO ENTERPRISE CORP
Part Package Code DO-27
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.7 V 1.1 V
Non-rep Pk Forward Current-Max 150 A 200 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 175 °C 175 °C
Output Current-Max 3 A 3 A
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Recovery Time-Max 0.075 µs
Surface Mount NO NO
Base Number Matches 9 38
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY
Application GENERAL PURPOSE
Case Connection ISOLATED
JEDEC-95 Code DO-27
JESD-30 Code O-PALF-W2
Number of Terminals 2
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Reverse Current-Max 5 µA
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare UF5406G with alternatives

Compare 1N5406G with alternatives