UF3J vs ES3JBHR5G feature comparison

UF3J Galaxy Microelectronics

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ES3JBHR5G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Application GENERAL PURPOSE EFFICIENCY
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.7 V 1.45 V
Non-rep Pk Forward Current-Max 100 A 100 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 3 A 3 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Recovery Time-Max 0.075 µs 0.035 µs
Surface Mount YES YES
Base Number Matches 10 1
Package Description SMB, 2 PIN
HTS Code 8541.10.00.80
Samacsys Manufacturer Taiwan Semiconductor
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Terminals 2
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reference Standard AEC-Q101
Reverse Current-Max 10 µA
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

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