U1GWJ44TE12R
vs
HS2DG
feature comparison
All Stats
Differences Only
Part Life Cycle Code
End Of Life
Active
Ihs Manufacturer
TOSHIBA CORP
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
125 °C
150 °C
Operating Temperature-Min
-40 °C
-55 °C
Output Current-Max
1 A
2 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
40 V
200 V
Reverse Recovery Time-Max
0.035 µs
0.05 µs
Surface Mount
YES
YES
Technology
SCHOTTKY
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Application
EFFICIENCY
Forward Voltage-Max (VF)
1 V
JEDEC-95 Code
DO-214AA
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
50 A
Number of Phases
1
Peak Reflow Temperature (Cel)
250
Reverse Current-Max
5 µA
Reverse Test Voltage
200 V
Terminal Finish
TIN
Time@Peak Reflow Temperature-Max (s)
30
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