TST10H150CWC0G
vs
25ETS12PBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
LOW POWER LOSS
HIGH RELIABILITY
Application
EFFICIENCY
GENERAL PURPOSE
Case Connection
CATHODE
CATHODE
Configuration
COMMON CATHODE, 2 ELEMENTS
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.88 V
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e3
Non-rep Pk Forward Current-Max
100 A
300 A
Number of Elements
2
1
Number of Phases
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-40 °C
Output Current-Max
5 A
25 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Rep Pk Reverse Voltage-Max
150 V
1200 V
Reverse Current-Max
100 µA
Surface Mount
NO
NO
Technology
SCHOTTKY
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Base Number Matches
1
2
Package Description
R-PSFM-T3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare TST10H150CWC0G with alternatives
Compare 25ETS12PBF with alternatives