TSD10H200CWC0G
vs
RB088BM200TL
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
ROHM CO LTD
Package Description
D2PAK-3/2
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
LOW POWER LOSS
HIGH RELIABILITY
Application
EFFICIENCY
GENERAL PURPOSE
Case Connection
CATHODE
CATHODE
Configuration
COMMON CATHODE, 2 ELEMENTS
COMMON CATHODE, 2 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.91 V
0.88 V
JEDEC-95 Code
TO-263AB
TO-252
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Non-rep Pk Forward Current-Max
100 A
100 A
Number of Elements
2
2
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Output Current-Max
5 A
5 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
250
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Current-Max
100 µA
7 µA
Surface Mount
YES
YES
Technology
SCHOTTKY
SCHOTTKY
Terminal Finish
MATTE TIN
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Base Number Matches
1
1
Rohs Code
Samacsys Manufacturer
ROHM Semiconductor
Moisture Sensitivity Level
1
Reverse Test Voltage
200 V
Compare TSD10H200CWC0G with alternatives
Compare RB088BM200TL with alternatives