TSD10H200CWC0G vs MURB1020CT-TP feature comparison

TSD10H200CWC0G Taiwan Semiconductor

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MURB1020CT-TP Micro Commercial Components

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICRO COMMERCIAL COMPONENTS CORP
Package Description D2PAK-3/2 D2PAK-3/2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature LOW POWER LOSS LOW POWER LOSS
Application EFFICIENCY EFFICIENCY
Case Connection CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.91 V 0.95 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 100 A 100 A
Number of Elements 2 2
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 5 A 5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 250 260
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 100 µA 10 µA
Surface Mount YES YES
Technology SCHOTTKY
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 5
Base Number Matches 1 1
Rohs Code Yes
Reverse Recovery Time-Max 0.035 µs

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Compare MURB1020CT-TP with alternatives