TS4448RGG
vs
TS4448RWG
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
R-PBCC-N2
|
R-XBCC-N2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Date Of Intro |
2016-01-20
|
|
| Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
R-PBCC-N2
|
R-XBCC-N2
|
| JESD-609 Code |
e3
|
e4
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Output Current-Max |
0.125 A
|
0.125 A
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Power Dissipation-Max |
0.15 W
|
0.2 W
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Recovery Time-Max |
0.009 µs
|
0.009 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
GOLD
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare TS4448RGG with alternatives
Compare TS4448RWG with alternatives