TPSMC9.1AHE3_B/H vs SMCJ5632AE3/TR13 feature comparison

TPSMC9.1AHE3_B/H Vishay Intertechnologies

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SMCJ5632AE3/TR13 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 8 Weeks
Date Of Intro 2016-09-25
Samacsys Manufacturer Vishay Microsemi Corporation
Additional Feature EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 9.55 V 9.55 V
Breakdown Voltage-Min 8.65 V 8.65 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 185 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 7.78 V 7.78 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
Part Package Code DO-214AB
Package Description PLASTIC PACKAGE-2
Pin Count 2
Power Dissipation-Max 5 W
Qualification Status Not Qualified

Compare TPSMC9.1AHE3_B/H with alternatives

Compare SMCJ5632AE3/TR13 with alternatives