SMCJ5632AE3/TR13 vs 1.5SMC9.1AHV7G feature comparison

SMCJ5632AE3/TR13 Microsemi Corporation

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1.5SMC9.1AHV7G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-214AB
Package Description PLASTIC PACKAGE-2
Pin Count 2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Microsemi Corporation
Additional Feature HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 9.55 V 9.55 V
Breakdown Voltage-Min 8.65 V 8.65 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 6.5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 7.78 V 7.78 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Breakdown Voltage-Nom 9.1 V
Clamping Voltage-Max 13.4 V
Forward Voltage-Max (VF) 3.5 V
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101; IEC-61249-2-21
Reverse Current-Max 50 µA
Reverse Test Voltage 7.78 V
Time@Peak Reflow Temperature-Max (s) 30

Compare SMCJ5632AE3/TR13 with alternatives

Compare 1.5SMC9.1AHV7G with alternatives