TK39N60W5 vs STB43N65M5 feature comparison

TK39N60W5 Toshiba America Electronic Components

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STB43N65M5 STMicroelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TOSHIBA CORP STMICROELECTRONICS
Package Description FLANGE MOUNT, R-PSFM-T3 TO-263, D2PAK-3/2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 20 Weeks 14 Weeks
Samacsys Manufacturer Toshiba STMicroelectronics
Avalanche Energy Rating (Eas) 608 mJ 650 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 650 V
Drain Current-Max (ID) 38.8 A 42 A
Drain-source On Resistance-Max 0.074 Ω 0.063 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 155 A 168 A
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101
Terminal Finish Matte Tin (Sn)

Compare TK39N60W5 with alternatives

Compare STB43N65M5 with alternatives