TK39N60W5
vs
STB43N65M5
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TOSHIBA CORP
STMICROELECTRONICS
Package Description
FLANGE MOUNT, R-PSFM-T3
TO-263, D2PAK-3/2
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
20 Weeks
14 Weeks
Samacsys Manufacturer
Toshiba
STMicroelectronics
Avalanche Energy Rating (Eas)
608 mJ
650 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
650 V
Drain Current-Max (ID)
38.8 A
42 A
Drain-source On Resistance-Max
0.074 Ω
0.063 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
245
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
155 A
168 A
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Min
-55 °C
Reference Standard
AEC-Q101
Terminal Finish
Matte Tin (Sn)
Compare TK39N60W5 with alternatives
Compare STB43N65M5 with alternatives