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Transistors / Power Field-Effect Transistors / TK39N60W5
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TK39N60W5 by: Toshiba America Electronic Components

Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V

Part Details for TK39N60W5 by Toshiba America Electronic Components

Overview of TK39N60W5 by Toshiba America Electronic Components

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Part Details for TK39N60W5

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TK39N60W5 Part Data Attributes

Parametric Data
TK39N60W5 Toshiba America Electronic Components
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TK39N60W5 Toshiba America Electronic Components Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 608 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 38.8 A
Drain-source On Resistance-Max 0.074 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 155 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TK39N60W5

This table gives cross-reference parts and alternative options found for TK39N60W5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK39N60W5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
TK39J60W5(Q) Toshiba America Electronic Components Check for Price TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,38.8A I(D),TO-247VAR TK39N60W5 vs TK39J60W5(Q)
TK39J60W5(F) Toshiba America Electronic Components Check for Price TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,38.8A I(D),TO-247VAR TK39N60W5 vs TK39J60W5(F)
Part Number Manufacturer Composite Price Description Compare
IPW65R080CFDFKSA2 Infineon Technologies AG $9.4432 Power Field-Effect Transistor, TK39N60W5 vs IPW65R080CFDFKSA2
IPB60R099C6 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN TK39N60W5 vs IPB60R099C6
NVHL082N65S3F onsemi $6.2969 Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 40 A, 82 mΩ, TO-247, TO-247-3LD, 450-TUBE, Automotive Qualified TK39N60W5 vs NVHL082N65S3F
IPW65R080CFD Infineon Technologies AG Check for Price Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 TK39N60W5 vs IPW65R080CFD
STB43N65M5 STMicroelectronics $7.7451 Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package TK39N60W5 vs STB43N65M5
IXKH35N60C5 Littelfuse Inc $9.2190 Power Field-Effect Transistor, TK39N60W5 vs IXKH35N60C5
IPW65R080CFDAFKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 TK39N60W5 vs IPW65R080CFDAFKSA1
APT38N60BC6 Microchip Technology Inc $6.5472 Power Field-Effect Transistor, 38A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 TK39N60W5 vs APT38N60BC6
NVHL082N65S3HF onsemi $5.5673 Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 40 A, 82 mΩ, TO-247 fast recovery, TO-247-3LD, 450-TUBE, Automotive Qualified TK39N60W5 vs NVHL082N65S3HF
IPW65R080CFDAXK Infineon Technologies AG Check for Price Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 TK39N60W5 vs IPW65R080CFDAXK

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