Datasheets
TK39N60W5 by: Toshiba America Electronic Components

Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V

Part Details for TK39N60W5 by Toshiba America Electronic Components

Overview of TK39N60W5 by Toshiba America Electronic Components

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for TK39N60W5

Part # Distributor Description Stock Price Buy
DISTI # TK39N60W5,S1VF
Avnet Americas Trans MOSFET N-CH 600V 38.8A 3-Pin TO-247 - Rail/Tube (Alt: TK39N60W5,S1VF) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube 15
  • 30 $3.2895
  • 40 $3.2035
  • 70 $3.0530
  • 150 $2.9670
  • 300 $2.9025
  • 1,500 $2.8165
  • 3,000 $2.7520
$2.7520 / $3.2895 Buy Now
Win Source Electronics   9600
  • 15 $3.5210
  • 35 $2.8890
  • 54 $2.7990
  • 74 $2.7090
  • 96 $2.6190
  • 128 $2.3480
$2.3480 / $3.5210 Buy Now

Part Details for TK39N60W5

TK39N60W5 CAD Models

TK39N60W5 Part Data Attributes

TK39N60W5 Toshiba America Electronic Components
Buy Now Datasheet
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TK39N60W5 Toshiba America Electronic Components Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 608 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 38.8 A
Drain-source On Resistance-Max 0.074 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 155 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TK39N60W5

This table gives cross-reference parts and alternative options found for TK39N60W5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK39N60W5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STB57N65M5 N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in D2PAK package STMicroelectronics TK39N60W5 vs STB57N65M5
Part Number Description Manufacturer Compare
STB43N65M5 Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package STMicroelectronics TK39N60W5 vs STB43N65M5
NVHL082N65S3F Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 40 A, 82 mΩ, TO-247, 450-TUBE, Automotive Qualified onsemi TK39N60W5 vs NVHL082N65S3F
IPB60R099C6ATMA1 Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG TK39N60W5 vs IPB60R099C6ATMA1
NTHL082N65S3F Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, TO-247, 450-TUBE onsemi TK39N60W5 vs NTHL082N65S3F
STB57N65M5 N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in D2PAK package STMicroelectronics TK39N60W5 vs STB57N65M5
NVHL082N65S3HF Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 40 A, 82 mΩ, TO-247 fast recovery, 450-TUBE, Automotive Qualified onsemi TK39N60W5 vs NVHL082N65S3HF
IPW65R080CFDFKSA1 Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG TK39N60W5 vs IPW65R080CFDFKSA1
IPW65R080CFDAXK Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG TK39N60W5 vs IPW65R080CFDAXK

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