TDTC123J
vs
PDTC115ES
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
TOSHIBA CORP
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G3
CYLINDRICAL, O-PBCY-T3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Toshiba
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 21
BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
80
80
JESD-30 Code
R-PDSO-G3
O-PBCY-T3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
NPN
NPN
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
DUAL
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
250 MHz
Base Number Matches
1
3
Part Package Code
TO-92
Pin Count
3
JEDEC-95 Code
TO-92
JESD-609 Code
e3
Power Dissipation-Max (Abs)
0.5 W
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
Compare TDTC123J with alternatives
Compare PDTC115ES with alternatives