PDTC115ES
vs
PMBTA14-T
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Part Package Code
TO-92
SOT-23
Package Description
CYLINDRICAL, O-PBCY-T3
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.5 A
Collector-Emitter Voltage-Max
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
DARLINGTON
DC Current Gain-Min (hFE)
80
20000
JEDEC-95 Code
TO-92
TO-236AB
JESD-30 Code
O-PBCY-T3
R-PDSO-G3
JESD-609 Code
e3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
CYLINDRICAL
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
0.5 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
BOTTOM
DUAL
Transistor Application
SWITCHING
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
2
Operating Temperature-Max
150 °C
Transition Frequency-Nom (fT)
125 MHz
VCEsat-Max
1.5 V
Compare PDTC115ES with alternatives
Compare PMBTA14-T with alternatives