TC55V1001AFI-10 vs EDI88130CS55L32B feature comparison

TC55V1001AFI-10 Toshiba America Electronic Components

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EDI88130CS55L32B Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer TOSHIBA CORP MICROSEMI CORP
Part Package Code SOIC QFJ
Package Description 0.525 INCH, 1.27 MM PITCH, PLASTIC, SOP-32 QCCN,
Pin Count 32 32
Reach Compliance Code unknown compliant
Access Time-Max 100 ns 55 ns
JESD-30 Code R-PDSO-G32 R-CQCC-N32
JESD-609 Code e0 e0
Length 20.6 mm 13.97 mm
Memory Density 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 131072 words 131072 words
Number of Words Code 128000 128000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 125 °C
Operating Temperature-Min -40 °C -55 °C
Organization 128KX8 128KX8
Package Body Material PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED
Package Code SOP QCCN
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Seated Height-Max 2.8 mm 3.048 mm
Supply Voltage-Max (Vsup) 3.6 V 5.5 V
Supply Voltage-Min (Vsup) 2.7 V 4.5 V
Supply Voltage-Nom (Vsup) 3 V 5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL MILITARY
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING NO LEAD
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position DUAL QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.7 mm 11.43 mm
Base Number Matches 2 1
Pbfree Code No
ECCN Code 3A001.A.2.C
HTS Code 8542.32.00.41
Screening Level MIL-STD-883

Compare TC55V1001AFI-10 with alternatives

Compare EDI88130CS55L32B with alternatives