SUP60N06-18
vs
SPU08P06P
feature comparison
All Stats
Differences Only
Rohs Code
No
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SILICONIX INC
SIEMENS A G
Part Package Code
TO-220AB
Package Description
,
IN-LINE, R-PSIP-T3
Pin Count
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
60 A
8.8 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Polarity/Channel Type
N-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
120 W
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Base Number Matches
1
1
Additional Feature
AVALANCHE RATED
DS Breakdown Voltage-Min
60 V
Drain-source On Resistance-Max
0.3 Ω
JESD-30 Code
R-PSIP-T3
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Qualification Status
Not Qualified
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Element Material
SILICON
Compare SUP60N06-18 with alternatives
Compare SPU08P06P with alternatives