SUD06N10-225L-E3
vs
RFD16N02LSM
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
VISHAY SILICONIX
HARRIS SEMICONDUCTOR
Part Package Code
TO-252
Package Description
LEAD FREE PACKAGE-3
Pin Count
4
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
20 V
Drain Current-Max (ID)
6.5 A
16 A
Drain-source On Resistance-Max
0.2 Ω
0.022 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
8 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN OVER NICKEL
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
3
Additional Feature
MEGAFET, LOGIC LEVEL COMPATIBLE
Power Dissipation-Max (Abs)
90 W
Transistor Application
SWITCHING
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