SUB70N03-09P
vs
RFD16N06SM9A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SILICONIX INC
INTERSIL CORP
Part Package Code
D2PAK
Package Description
,
Pin Count
4
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
70 A
16 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
93 W
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Base Number Matches
2
3
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
Case Connection
DRAIN
DS Breakdown Voltage-Min
60 V
Drain-source On Resistance-Max
0.047 Ω
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Power Dissipation Ambient-Max
72 W
Qualification Status
Not Qualified
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
125 ns
Turn-on Time-Max (ton)
65 ns
Compare SUB70N03-09P with alternatives
Compare RFD16N06SM9A with alternatives