STW70N10F4
vs
NTB6412ANT4G
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
STMICROELECTRONICS
|
ONSEMI
|
Part Package Code |
TO-247
|
D2PAK 2 LEAD
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
D2PAK-3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
120 mJ
|
300 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
65 A
|
58 A
|
Drain-source On Resistance-Max |
0.0195 Ω
|
0.0182 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-247
|
|
JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
150 W
|
167 W
|
Pulsed Drain Current-Max (IDM) |
260 A
|
240 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
MATTE TIN
|
Tin (Sn)
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Manufacturer Package Code |
|
418B-04
|
HTS Code |
|
8541.29.00.95
|
Factory Lead Time |
|
4 Weeks
|
Samacsys Manufacturer |
|
onsemi
|
Case Connection |
|
DRAIN
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
Compare STW70N10F4 with alternatives
Compare NTB6412ANT4G with alternatives