STW28N65M2
vs
STI23NM60ND
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
STMICROELECTRONICS
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
16 Weeks
Samacsys Manufacturer
STMicroelectronics
STMicroelectronics
Avalanche Energy Rating (Eas)
760 mJ
700 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
600 V
Drain Current-Max (ID)
20 A
19.5 A
Drain-source On Resistance-Max
0.18 Ω
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
TO-262AA
JESD-30 Code
R-PSFM-T3
R-PSIP-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
IN-LINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
170 W
150 W
Pulsed Drain Current-Max (IDM)
80 A
78 A
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Part Package Code
TO-262AA
Package Description
IN-LINE, R-PSIP-T3
Pin Count
3
JESD-609 Code
e3
Qualification Status
Not Qualified
Terminal Finish
Matte Tin (Sn) - annealed
Compare STW28N65M2 with alternatives
Compare STI23NM60ND with alternatives