STP8NM60 vs STD12NF06L-1 feature comparison

STP8NM60 STMicroelectronics

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STD12NF06L-1 STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer STMICROELECTRONICS STMICROELECTRONICS
Part Package Code TO-220AB TO-251
Package Description FLANGE MOUNT, R-PSFM-T3 ROHS COMPLIANT, IPAK-3
Pin Count 3 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer STMicroelectronics STMicroelectronics
Avalanche Energy Rating (Eas) 200 mJ 100 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 60 V
Drain Current-Max (ID) 8 A 12 A
Drain-source On Resistance-Max 1 Ω 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-251
JESD-30 Code R-PSFM-T3 R-PSIP-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 100 W 30 W
Pulsed Drain Current-Max (IDM) 32 A 48 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 5 1
Factory Lead Time 26 Weeks
Case Connection DRAIN
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare STP8NM60 with alternatives

Compare STD12NF06L-1 with alternatives