Datasheets
STD12NF06L-1 by: STMicroelectronics

N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package

Part Details for STD12NF06L-1 by STMicroelectronics

Overview of STD12NF06L-1 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STD12NF06L-1

Part # Distributor Description Stock Price Buy
DISTI # 98Y2469
Newark Mosfet, N-Ch, 60V, 12A, To-252-3, Transistor Polarity:N Channel, Continuous Drain Current Id:12A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.06Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Dissipation Rohs Compliant: Yes |Stmicroelectronics STD12NF06L-1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 798
  • 1 $0.9430
  • 10 $0.8660
  • 150 $0.7890
  • 525 $0.5860
  • 1,050 $0.4980
  • 2,550 $0.3890
  • 10,050 $0.3710
$0.3710 / $0.9430 Buy Now
DISTI # 497-6730-5-ND
DigiKey MOSFET N-CH 60V 12A IPAK Min Qty: 1 Lead time: 26 Weeks Container: Tube 1402
In Stock
  • 1 $0.8200
  • 75 $0.6797
  • 150 $0.4933
  • 525 $0.4122
  • 1,050 $0.3508
  • 2,025 $0.3125
  • 5,025 $0.2960
  • 10,050 $0.2741
$0.2741 / $0.8200 Buy Now
DISTI # STD12NF06L-1
Avnet Americas Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STD12NF06L-1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 3,000 $0.3159
  • 6,000 $0.3094
  • 12,000 $0.3029
$0.3029 / $0.3159 Buy Now
DISTI # 511-STD12NF06L-1
Mouser Electronics MOSFET N-Ch 60 Volt 12 Amp RoHS: Compliant 15601
  • 1 $0.8200
  • 10 $0.5000
  • 100 $0.4040
  • 500 $0.3690
  • 1,000 $0.3080
  • 3,000 $0.3020
  • 9,000 $0.2800
  • 24,000 $0.2670
$0.2670 / $0.8200 Buy Now
STMicroelectronics N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package RoHS: Compliant Min Qty: 1 15601
  • 1 $0.8000
  • 10 $0.4800
  • 100 $0.3900
  • 500 $0.3500
$0.3500 / $0.8000 Buy Now
Future Electronics N-Channel 60 V 0.1 Ω STripFET II Power MosFet - TO-251 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube 0
Tube
  • 75 $0.3150
  • 375 $0.3000
  • 1,500 $0.2900
  • 3,750 $0.2800
  • 9,375 $0.2650
$0.2650 / $0.3150 Buy Now
Future Electronics N-Channel 60 V 0.1 Ω STripFET II Power MosFet - TO-251 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube 0
Tube
  • 75 $0.3150
  • 375 $0.3000
  • 1,500 $0.2900
  • 3,750 $0.2800
  • 9,375 $0.2650
$0.2650 / $0.3150 Buy Now
Future Electronics N-Channel 60 V 0.1 Ω STripFET II Power MosFet - TO-251 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube 0
Tube
  • 75 $0.3200
  • 375 $0.3050
  • 1,875 $0.2900
  • 5,625 $0.2800
  • 15,000 $0.2650
$0.2650 / $0.3200 Buy Now
DISTI # STD12NF06L-1
Avnet Americas Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STD12NF06L-1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 3,000 $0.3159
  • 6,000 $0.3094
  • 12,000 $0.3029
$0.3029 / $0.3159 Buy Now
DISTI # STD12NF06L-1
TME Transistor: N-MOSFET, STripFET™ II, unipolar, 60V, 12A, 30W, IPAK Min Qty: 1 19
  • 1 $1.1310
  • 5 $0.4680
  • 25 $0.4240
  • 75 $0.3810
  • 300 $0.3480
$0.3480 / $1.1310 Buy Now
DISTI # STD12NF06L-1
Avnet Silica Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Tube (Alt: STD12NF06L-1) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 17 Weeks, 0 Days Silica - 258150
Buy Now

Part Details for STD12NF06L-1

STD12NF06L-1 CAD Models

STD12NF06L-1 Part Data Attributes:

STD12NF06L-1 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STD12NF06L-1 STMicroelectronics N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-251
Package Description ROHS COMPLIANT, IPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 30 W
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STD12NF06L-1

This table gives cross-reference parts and alternative options found for STD12NF06L-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD12NF06L-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF610B_FP001 Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation STD12NF06L-1 vs IRF610B_FP001
FDP18N50 Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation STD12NF06L-1 vs FDP18N50
PHD3055L 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 NXP Semiconductors STD12NF06L-1 vs PHD3055L
STH8NA60 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics STD12NF06L-1 vs STH8NA60
STD3NA50T4 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics STD12NF06L-1 vs STD3NA50T4
IPP45N06S4L-08 Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STD12NF06L-1 vs IPP45N06S4L-08
934057024118 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 NXP Semiconductors STD12NF06L-1 vs 934057024118
IRF620B Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation STD12NF06L-1 vs IRF620B
SPP80N06S2L-06 Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STD12NF06L-1 vs SPP80N06S2L-06
STP75NF75 N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package STMicroelectronics STD12NF06L-1 vs STP75NF75

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