STP50NE10L vs BUK9614-30 feature comparison

STP50NE10L STMicroelectronics

Buy Now Datasheet

BUK9614-30 NXP Semiconductors

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS NXP SEMICONDUCTORS
Part Package Code TO-220AB
Package Description TO-220-3 PIN SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED ESD PROTECTED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 400 mJ 125 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 30 V
Drain Current-Max (ID) 50 A 69 A
Drain-source On Resistance-Max 0.03 Ω 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 200 A 240 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Case Connection DRAIN

Compare STP50NE10L with alternatives

Compare BUK9614-30 with alternatives