STD70N10F4 vs NTB6412ANT4G feature comparison

STD70N10F4 STMicroelectronics

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NTB6412ANT4G onsemi

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS ONSEMI
Part Package Code TO-252 D2PAK 2 LEAD
Package Description ROHS COMPLIANT, DPAK-3 D2PAK-3
Pin Count 3 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 32 Weeks, 4 Days 4 Weeks
Samacsys Manufacturer STMicroelectronics onsemi
Avalanche Energy Rating (Eas) 120 mJ 300 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 60 A 58 A
Drain-source On Resistance-Max 0.0195 Ω 0.0182 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W 167 W
Pulsed Drain Current-Max (IDM) 240 A 240 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 40
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Manufacturer Package Code 418B-04
HTS Code 8541.29.00.95
Case Connection DRAIN

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