STD60N10
vs
IRF540PBF
feature comparison
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
STMICROELECTRONICS
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
LEAD FREE PACKAGE-3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
60 A
|
28 A
|
Drain-source On Resistance-Max |
0.0195 Ω
|
0.077 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
125 W
|
150 W
|
Pulsed Drain Current-Max (IDM) |
240 A
|
110 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
Part Package Code |
|
TO-220AB
|
Avalanche Energy Rating (Eas) |
|
230 mJ
|
Case Connection |
|
DRAIN
|
JEDEC-95 Code |
|
TO-220AB
|
JESD-609 Code |
|
e3
|
Peak Reflow Temperature (Cel) |
|
250
|
Terminal Finish |
|
Matte Tin (Sn) - with Nickel (Ni) barrier
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare STD60N10 with alternatives
Compare IRF540PBF with alternatives