Part Details for STD60N10 by STMicroelectronics
Overview of STD60N10 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for STD60N10
STD60N10 CAD Models
STD60N10 Part Data Attributes:
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STD60N10
STMicroelectronics
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Datasheet
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STD60N10
STMicroelectronics
60A, 100V, 0.0195ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0195 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STD60N10
This table gives cross-reference parts and alternative options found for STD60N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD60N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF541 | 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | STD60N10 vs IRF541 |
| MTB40N10ET4 | 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | onsemi | STD60N10 vs MTB40N10ET4 |
| IRF540 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Intertechnologies | STD60N10 vs IRF540 |
| BUK455-100A | TRANSISTOR 26 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | STD60N10 vs BUK455-100A |
| IRF541 | 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | STD60N10 vs IRF541 |
| IRF543 | 25A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | STD60N10 vs IRF543 |
| IRF543 | Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | STD60N10 vs IRF543 |
| IRF542 | Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | STD60N10 vs IRF542 |
| IRF541 | 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | STD60N10 vs IRF541 |
| NTB6411ANG | 72A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3 | Rochester Electronics LLC | STD60N10 vs NTB6411ANG |