STB8NC50T4
vs
STB9NK50ZT4
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
STMICROELECTRONICS
STMICROELECTRONICS
Package Description
SMALL OUTLINE, R-PSSO-G2
D2PAK-3
Pin Count
3
3
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
600 mJ
190 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
8 A
7.2 A
Drain-source On Resistance-Max
0.85 Ω
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
135 W
110 W
Pulsed Drain Current-Max (IDM)
32 A
28.8 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
14 Weeks
Date Of Intro
1980-01-04
Samacsys Manufacturer
STMicroelectronics
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
245
Time@Peak Reflow Temperature-Max (s)
30
Compare STB8NC50T4 with alternatives
Compare STB9NK50ZT4 with alternatives