STB8NC50 vs FS10VS-10 feature comparison

STB8NC50 STMicroelectronics

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FS10VS-10 Powerex Power Semiconductors

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS POWEREX INC
Package Description D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 600 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 8 A 10 A
Drain-source On Resistance-Max 0.85 Ω 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 135 W 125 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Part Package Code TO-220S
HTS Code 8541.29.00.95
Case Connection DRAIN
Power Dissipation Ambient-Max 125 W

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