STB60NF06T4 vs FDB86566_F085 feature comparison

STB60NF06T4 STMicroelectronics

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FDB86566_F085 onsemi

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS ON SEMICONDUCTOR
Package Description ROHS COMPLIANT, D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 39 Weeks 77 Weeks
Samacsys Manufacturer STMicroelectronics onsemi
Avalanche Energy Rating (Eas) 360 mJ 193 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 60 A 110 A
Drain-source On Resistance-Max 0.016 Ω 0.0027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 110 W 176 W
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Manufacturer Package Code TO263A02
Case Connection DRAIN
JEDEC-95 Code TO-263AB
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101
Turn-off Time-Max (toff) 64 ns
Turn-on Time-Max (ton) 115 ns

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Compare FDB86566_F085 with alternatives