STB60NF06LT4 vs NTB60N06G feature comparison

STB60NF06LT4 STMicroelectronics

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NTB60N06G onsemi

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS ON SEMICONDUCTOR
Part Package Code D2PAK
Package Description D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 39 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature LOW THRESHOLD, AVALANCHE RATED
Avalanche Energy Rating (Eas) 320 mJ 454 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 60 A 60 A
Drain-source On Resistance-Max 0.016 Ω 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 150 W
Pulsed Drain Current-Max (IDM) 240 A 180 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Manufacturer Package Code CASE 418B-04

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Compare NTB60N06G with alternatives