STB3NK60ZT4 vs SSW4N60B feature comparison

STB3NK60ZT4 STMicroelectronics

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SSW4N60B Fairchild Semiconductor Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS FAIRCHILD SEMICONDUCTOR CORP
Package Description D2PAK-3 D2PAK-3
Pin Count 3 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Date Of Intro 1980-01-04
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 150 mJ 240 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 2.4 A 4 A
Drain-source On Resistance-Max 3.6 Ω 2.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 45 W 100 W
Pulsed Drain Current-Max (IDM) 9.6 A 16 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code TO-263
Case Connection DRAIN
JEDEC-95 Code TO-263AB

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